Gate Driver Integrated Circuit with Breakdown Protection for Switch-mode Power Amplifiers

نویسنده

  • Jong-Ryul Yang
چکیده

This paper proposes a gate driver integrated circuit to prevent breakdown of switching power amplifiers. The proposed circuit consists of a dead-time generator, level shifters, and a breakdown blocker. The dead-time generator makes non-overlapped input signals and the breakdown blocker detects instantaneous turned-on input signals and resets them to the off-state before the switching power cells are damaged. The circuit is designed using TowerJazz’s 0.18μm BCD process for a tightly coupled wireless power transfer system. The protecting operation is verified using circuit simulation including layout-dependent characteristics.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Universal Soi-based High Temperature Gate Driver Integrated Circuit for Sic Power Switches with On-chip Short Circuit Protection

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost hightemperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron sili...

متن کامل

Advanced Gate Drive for the Sns High Voltage Converter Modulator*

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned dr...

متن کامل

A Class E Power Amplifier with Low Voltage Stress

A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...

متن کامل

Performance Comparison for A4WP Class-3 Wireless Power Compliance between eGaN FET and MOSFET in a ZVS Class D Amplifier

eGaN FETs have repeatedly demonstrated higher efficiency than MOSFETs in wireless power transfer amplifiers when operated over a wide impedance range using a ZVS Class D amplifier [1, 2, 3, 4, 5, 6, 7, and 8]. In this article we examine a method to further improve the performance of eGaN FETs by replacing the bootstrap diode of the high side gate driver with an eGaN FET that is driven synchrono...

متن کامل

IGBT Gate Driver Solutions for Low and Medium Power Applications

Issue 6 2010 Power Electronics Europe www.power-mag.com Power electronics systems are commonly used in motor drive, power supply and power conversion applications. They cover a wide output power spectrum: from several hundred watts in small drives up to megawatts in wind power installations or large drive systems. Inside the system the gate driver circuit with its extensive control and monitori...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2016